Oxidation properties of silicon dots on silicon oxide investigated using energy filtering transmission electron microscopy.

Autor: Single, C., Zhou, F., Heidemeyer, H., Prins, F. E., Kern, D. P., Plies, E.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1998, Vol. 16 Issue 6, p3938-3942, 5p
Databáze: Complementary Index