Structure of InAs/AlSb/InAs resonant tunneling diode interfaces.

Autor: Nosho, B. Z., Weinberg, W. H., Zinck, J. J., Shanabrook, B. V., Bennett, B. R., Whitman, L. J.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1998, Vol. 16 Issue 4, p2381-2386, 6p
Databáze: Complementary Index