Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates.
| Autor: | Sieg, R. M., Ringel, S. A., Ting, S. M., Samavedam, S. B., Currie, M., Langdo, T., Fitzgerald, E. A. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1998, Vol. 16 Issue 3, p1471-1474, 4p |
| Databáze: | Complementary Index |
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