High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon.
| Autor: | Hartford, C. L., Hillard, R. J., Mazur, R. G., Foad, M. A. |
|---|---|
| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1998, Vol. 16 Issue 1, p316-319, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|