Real time investigation of nucleation and growth of silicon on silicon dioxide using silane and disilane in a rapid thermal processing system.

Autor: Hu, Y. Z., Diehl, D. J., Zhao, C. Y., Wang, C. L., Liu, Q., Irene, E. A., Christensen, K. N., Venable, D., Maher, D. M.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 2, p744-750, 7p
Databáze: Complementary Index