Verification of models for the simulation of boron implantation into crystalline silicon.

Autor: Hobler, G., Simionescu, A., Palmetshofer, L., Jahnel, F., von Criegern, R., Tian, C., Stingeder, G.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 1, p272-277, 6p
Databáze: Complementary Index