Verification of models for the simulation of boron implantation into crystalline silicon.
Autor: | Hobler, G., Simionescu, A., Palmetshofer, L., Jahnel, F., von Criegern, R., Tian, C., Stingeder, G. |
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Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 1, p272-277, 6p |
Databáze: | Complementary Index |
Externí odkaz: |