Molecular-beam epitaxial growth of high quality InSb for p-i-n photodetectors.

Autor: Singh, G., Michel, E., Jelen, C., Slivken, S., Xu, J., Bove, P., Ferguson, I., Razeghi, M.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 2, p782-785, 4p
Databáze: Complementary Index