Depth profiling of dopants in thin gate oxides in complementary metal- oxide-semiconductor structures by resonance ionization mass spectrometry.
| Autor: | Downey, S. W., Emerson, A. B., Georgiou, G. E., Bevk, J., Kistler, R. C., Moriya, N., Jacobson, D. C., Wise, M. L. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 2, p167-173, 7p |
| Databáze: | Complementary Index |
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