Reactive ion etching-induced damage in InAlAs/InGaAs heterostructure field-effect transistors processed in HBr plasma.
| Autor: | Fay, Patrick, Agarwala, Sambhu, Scafidi, Carl, Adesida, Ilesanmi, Caneau, Catherine, Bhat, Rajaram |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1994, Vol. 12 Issue 6, p3322-3326, 5p |
| Databáze: | Complementary Index |
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