Electrical and optical properties of heavily n-doped GaSb-AlSb multiquantum well structures for infrared photodetector applications.

Autor: Brar, Berinder, Samoska, Lorene, Kroemer, Herbert, English, John H.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1994, Vol. 12 Issue 2, p1242-1245, 4p
Databáze: Complementary Index