Boron delta doping in Si and SiGe and its application toward field-effect transistor devices.
| Autor: | Carns, T. K., Zheng, X., Wang, K. L., Wu, S. L., Wang, S. J. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1994, Vol. 12 Issue 2, p1203-1206, 4p |
| Databáze: | Complementary Index |
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