Molecular-beam epitaxy growth of high-performance midinfrared diode lasers.

Autor: Turner, G. W., Choi, H. K., Calawa, D. R., Pantano, J. V., Chludzinski, J. W.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1994, Vol. 12 Issue 2, p1266-1268, 3p
Databáze: Complementary Index