Sputter-initiated resonance ionization spectroscopy: An analytical technique for quantitative and sensitive measurements of impurities and ultra-shallow doping profiles in semiconductors.

Autor:	Arlinghaus, H. F., Spaar, M. T., Tanigaki, T., McMahon, A. W., Holloway, P. H.
Zdroj:	Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1994, Vol. 12 Issue 1, p263-268, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu