Profiling of silicide-silicon structures using a combination of the spreading resistance and point contact current-voltage methods.

Autor: Heddleson, J. M., Weinzierl, S. R., Hillard, R. J., Rai-Choudhury, P., Mazur, R. G.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1994, Vol. 12 Issue 1, p317-321, 5p
Databáze: Complementary Index