Enhancement of Hall mobility in coupled δ-doped layers grown by molecular-beam epitaxy.

Autor: Carns, T. K., Zheng, X., Wu, B. J., Wang, K. L.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 3, p885-888, 4p
Databáze: Complementary Index