Nature and origin of residual impurities in high-purity GaAs and InP grown by chemical beam epitaxy.
| Autor: | Roth, A. P., Sudersena Rao, T., Benzaquen, R., Lacelle, C., Rolfe, S. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 3, p836-839, 4p |
| Databáze: | Complementary Index |
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