Be diffusion at the emitter-base junction of graded AlInAs/GaInAs heterojunction bipolar transistors.
| Autor: | Metzger, R. A., Hafizi, M., Wilson, R. G., Stanchina, W. E., Jensen, J. F., McCray, L. G. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 6, p2347-2350, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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