Profiling of ultra-shallow complementary metal-oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometry.

Autor:	Osburn, C. M., Berkowitz, H. L., Heddleson, J. M., Hillard, R. J., Mazur, R. G., Rai-Choudhury, P.
Zdroj:	Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 1, p533-539, 7p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu