0.5 μm GaAs metal semiconductor field effect transistor circuit fabrication using single layer I-line photoresists.
| Autor: | Pomerene, Andrew T. S., Greiner, James H., Connolly, John J. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1991, Vol. 9 Issue 6, p2898-2903, 6p |
| Databáze: | Complementary Index |
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