AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch.
| Autor: | Fullowan, T. R., Pearton, S. J., Kopf, K. F., Smith, P. R. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1991, Vol. 9 Issue 3, p1445-1448, 4p |
| Databáze: | Complementary Index |
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