Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures.

Autor: Reyes-Betanzo, C., Moshkalyov, S. A., Swart, J. W., Ramos, A. C. S.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 2003, Vol. 21 Issue 2, p461-469, 9p
Databáze: Complementary Index