Feature evolution during plasma etching. II. Polycrystalline silicon etching.

Autor: Lane, J. M., Klemens, F. P., Bogart, K. H. A., Malyshev, M. V., Lee, J. T. C.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 2000, Vol. 18 Issue 1, p188-196, 9p
Databáze: Complementary Index