Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor.
| Autor: | Rueger, N. R., Doemling, M. F., Schaepkens, M., Beulens, J. J., Standaert, T. E. F. M., Oehrlein, G. S. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1999, Vol. 17 Issue 5, p2492-2502, 11p |
| Databáze: | Complementary Index |
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