Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries.

Autor:	Wang, J. J., Lambers, E. S., Pearton, S. J., Ostling, M., Zetterling, C.-M., Grow, J. M., Ren, F., Shul, R. J.
Zdroj:	Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1998, Vol. 16 Issue 4, p2204-2209, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu