High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer.
| Autor: | Standaert, T. E. F. M., Schaepkens, M., Rueger, N. R., Sebel, P. G. M., Oehrlein, G. S., Cook, J. M. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1998, Vol. 16 Issue 1, p239-249, 11p |
| Databáze: | Complementary Index |
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