Comparison of dry etch chemistries for SiC.

Autor: McDaniel, G., Lee, J. W., Lambers, E. S., Pearton, S. J., Holloway, P. H., Ren, F., Grow, J. M., Bhaskaran, M., Wilson, R. G.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1997, Vol. 15 Issue 3, p885-889, 5p
Databáze: Complementary Index