Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures.
Autor: | Kastenmeier, B. E. E., Matsuo, P. J., Beulens, J. J., Oehrlein, G. S. |
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Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1996, Vol. 14 Issue 5, p2802-2813, 12p |
Databáze: | Complementary Index |
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