Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures.

Autor: Kastenmeier, B. E. E., Matsuo, P. J., Beulens, J. J., Oehrlein, G. S.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1996, Vol. 14 Issue 5, p2802-2813, 12p
Databáze: Complementary Index