Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition.
Autor: | Hwang, C.-Y., Schurman, M. J., Mayo, W. E., Li, Y., Lu, Y., Liu, H., Salagaj, T., Stall, R. A. |
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Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1995, Vol. 13 Issue 3, p672-675, 4p |
Databáze: | Complementary Index |
Externí odkaz: |