Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition.

Autor: Hwang, C.-Y., Schurman, M. J., Mayo, W. E., Li, Y., Lu, Y., Liu, H., Salagaj, T., Stall, R. A.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1995, Vol. 13 Issue 3, p672-675, 4p
Databáze: Complementary Index