Nitrogen-atom incorporation at Si-SiO2 interfaces by a low-temperature (300 °C), pre-deposition, remote-plasma oxidation using N2O.
| Autor: | Lee, David R., Lucovsky, Gerald, Denker, Mark S., Magee, Charles |
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| Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1995, Vol. 13 Issue 3, p1671-1675, 5p |
| Databáze: | Complementary Index |
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