Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization

Autor: Schlaf, R., Louder, D., Lang, O., Pettenkofer, C., Jaegermann, W., Nebesny, K. W., Lee, P. A., Parkinson, B. A., Armstrong, N. R.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1995, Vol. 13 Issue 3, p1761-1767, 7p
Databáze: Complementary Index