Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma.
| Autor: | Ding, J., Jenq, J.-S., Kim, G.-H., Maynard, H. L., Hamers, J. S., Hershkowitz, N., Taylor, J. W. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1993, Vol. 11 Issue 4, p1283-1288, 6p |
| Databáze: | Complementary Index |
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