Determination of the geometrical configuration of Bi on GaAs (110) by x-ray standing wave triangulation.

Autor: Herrera-Gómez, A., Kendelewicz, T., Woicik, J. C., Miyano, K. E., Pianetta, P., Southworth, S., Cowan, P. L., Karlin, B. A., Spicer, W. E.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1993, Vol. 11 Issue 4, p2354-2358, 5p
Databáze: Complementary Index