Analysis of ion scattering by thin SiO2 layers in boron implants through SiO2 into silicon.

Autor: Park, Changhae, Klein, Kevin M., Yang, Shyh-Horng, Tasch, Al F., Simonton, Robert B., Lux, Gayle E.
Zdroj: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1992, Vol. 10 Issue 4, p1690-1695, 6p
Databáze: Complementary Index