An edge-defined technique for fabricating submicron metal-semiconductor field effect transistor gates.
| Autor: | Strifler, W. A., Cantos, B. D. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1990, Vol. 8 Issue 6, p1297-1299, 3p |
| Databáze: | Complementary Index |
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