Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100).

Autor: Yu, E. T., Croke, E. T., Chow, D. H., Collins, D. A., Phillips, M. C., McGill, T. C., McCaldin, J. O., Miles, R. H.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1990, Vol. 8 Issue 4, p908-915, 8p
Databáze: Complementary Index