Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy.
| Autor: | Sitar, Z., Paisley, M. J., Yan, B., Ruan, J., Choyke, W. J., Davis, R. F. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1990, Vol. 8 Issue 2, p316-322, 7p |
| Databáze: | Complementary Index |
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