High aspect ratio 0.1 μm tungsten gates for InGaAs/InAlAs heterojunction transistors.
| Autor: | Tennant, D. M., Shunk, S. C., Feuer, M. D., Kuo, J-M., Behringer, R. E., Chang, T. Y., Epworth, R. W. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1989, Vol. 7 Issue 6, p1836-1840, 5p |
| Databáze: | Complementary Index |
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