High-pressure oxidation of InP through an SiO2 overlayer.
| Autor: | Geib, K. M., Chang, R. R., Lile, D. L., Wilmsen, C. W., Hryckowian, G., Zeto, R. J. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1989, Vol. 7 Issue 5, p1126-1129, 4p |
| Databáze: | Complementary Index |
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