Strain relaxation kinetics in Si1-xGex/Si heterostructures.

Autor: Hauenstein, R. J., Clemens, B. M., Miles, R. H., Marsh, O. J., Croke, E. T., McGill, T. C.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1989, Vol. 7 Issue 4, p767-774, 8p
Databáze: Complementary Index