Electronic structure and thermal stability of Ni/SiC(100) interfaces.

Autor: Höchst, H., Niles, D. W., Zajac, G. W., Fleisch, T. H., Johnson, B. C., Meese, J. M.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1988, Vol. 6 Issue 4, p1320-1325, 6p
Databáze: Complementary Index