Ion beam etching of InGaAs, InP, GaAs, Si, and Ge.

Autor: Chen, Wei-Xi, Walpita, L. M., Sun, C. C., Chang, W. S. C.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1986, Vol. 4 Issue 3, p701-705, 5p
Databáze: Complementary Index