Comparison of NPN transistors fabricated with broad beam and spatial profiling using focused beam ion implantation.

Autor:	Chu, S. D., Corelli, J. C., Steckl, A. J., Reuss, R. H., Clark, W. M., Rensch, D. B., Morris, W. G.
Zdroj:	Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1986, Vol. 4 Issue 1, p375-379, 5p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu