Molecular beam epitaxy growth of high performance GaAs power field effect transistors.
| Autor: | Abrokwah, J. K., Geddes, J., Longerbone, M. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1985, Vol. 3 Issue 5, p1323-1326, 4p |
| Databáze: | Complementary Index |
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