Selective and anisotropic reactive ion etch of LPCVD silicon nitride with CHF3 based gases.
Autor: | Mele, T. C., Nulman, J., Krusius, J. P. |
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Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1984, Vol. 2 Issue 4, p684-687, 4p |
Databáze: | Complementary Index |
Externí odkaz: |