Selective and anisotropic reactive ion etch of LPCVD silicon nitride with CHF3 based gases.

Autor: Mele, T. C., Nulman, J., Krusius, J. P.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1984, Vol. 2 Issue 4, p684-687, 4p
Databáze: Complementary Index