Summary Abstract: Two-stage process for silicide formation at metal-silicon interfaces.

Autor:	Nemanich, R. J., Stafford, B. L., Jackson, W. B., Thompson, M. J., Abelson, J. R., Sigmon, T. W.
Zdroj:	Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1984, Vol. 2 Issue 3, p588-588, 1p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu