Molecular beam epitaxial growth of InGaAsP.

Autor: Holah, G. D., Meeks, E. L., Eisele, F. L.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1983, Vol. 1 Issue 2, p182-185, 4p
Databáze: Complementary Index