Molecular beam epitaxial growth of InGaAsP.
Autor: | Holah, G. D., Meeks, E. L., Eisele, F. L. |
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Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1983, Vol. 1 Issue 2, p182-185, 4p |
Databáze: | Complementary Index |
Externí odkaz: |