Materials growth for InAs high electron mobility transistors and circuits.
Autor: | Bennett, Brian R., Tinkham, Brad P., Boos, J. Brad, Lange, Michael D., Tsai, Roger |
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Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2004, Vol. 22 Issue 2, p688-694, 7p |
Databáze: | Complementary Index |
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