Materials growth for InAs high electron mobility transistors and circuits.

Autor: Bennett, Brian R., Tinkham, Brad P., Boos, J. Brad, Lange, Michael D., Tsai, Roger
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2004, Vol. 22 Issue 2, p688-694, 7p
Databáze: Complementary Index