Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology.
Autor: | Ehrke, U., Sears, A., Lerch, W., Paul, S., Roters, G., Downey, D. F., Arevalo, E. A. |
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Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2004, Vol. 22 Issue 1, p346-349, 4p |
Databáze: | Complementary Index |
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