| Autor: |
Nomura, M.-S., Salleras, F., Dupertuis, M. A., Kappei, L., Marti, D., Deveaud, B., Emery, J.-Y., Crottini, A., Dagens, B., Shimura, T., Kuroda, K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/7/2002, Vol. 81 Issue 15, p2692, 3p, 3 Graphs |
| Abstrakt: |
We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 μm. As expected, longitudinal spatial hole burning is much smaller than in conventional semiconductor optical amplifiers and the effects of gain clamping are clearly evidenced. The amplifier nevertheless shows a sizeable temperature increase for both the lattice and the carriers at high currents, which are attributed to contfibutions of Auger recombination, intervalence band absorption, and Joule and recombination heating. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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