| Autor: |
J. Barsotti, R., Fischer, J. E., Lee, C. H., Mahmood, J., Adu, C. K. W., Eklund, P. C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/7/2002, Vol. 81 Issue 15, p2866, 3p, 3 Diagrams |
| Abstrakt: |
Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7 nm±2.9 nm surrounded by an amorphous SiO[SUBx] sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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